Kobayashi Shigeki | Advanced Lsi Technology Laboratory Toshiba Corporation
スポンサーリンク
概要
関連著者
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kobayashi Shigeki
Advanced Lsi Technology Laboratory Toshiba Corporation
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NAKABAYASHI Yukio
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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UCHIDA Ken
Tokyo Institute of Technology
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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KOBAYASHI Shigeki
Advanced LSI Technology Laboratory, Toshiba Corporation
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ken Uchida
Department of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toshinori Numata
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Masumi Saitoh
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toshinori Numata
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shigeki Kobayashi
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
- Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors