Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

概要

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Hall factor ($\gamma_{\text{H}}$) is investigated experimentally in the ultrathin-body (UTB) silicon-on-insulator (SOI) n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) with the SOI thicknesses ($T_{\text{SOI}}$) of less than 10 nm. It is demonstrated experimentally for the first time that when $T_{\text{SOI}}$ is thicker than 4.2 nm, $\gamma_{\text{H}}$ decreases slightly with a reduction of $T_{\text{SOI}}$, whereas when $T_{\text{SOI}}$ is thinner than 4.2 nm, $\gamma_{\text{H}}$ decreases drastically and becomes almost unity in $T_{\text{SOI}}$ of 2.5 nm. The $\gamma_{\text{H}}$ is calculated considering only phonon scattering. Then, calculated $\gamma_{\text{H}}$ is compared with $\gamma_{\text{H}}$ obtained experimentally. In addition, it is found that in phonon scattering $\gamma_{\text{H}}$ is determined dominantly by the intravalley scatterings of the twofold valleys. The dominance of the intravalley scatterings of the twofold valleys in the $\gamma_{\text{H}}$ determination is attributed to the energy levels of subbands whereby most of the scatterings are the intravalley scatterings of the twofold valleys.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-04-25