Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation
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概要
- 論文の詳細を見る
We aim at embedding a quantum dot on a suspended nanowire by solving the problem of unintentional quantum dot formation, which exacerbates in a suspended nanowire. The origin of this worsening is the higher potential barrier presumably owing to the enhancement of random-dopant-induced potential fluctuation and/or higher degree of surface roughness and surface trapped charges on suspended nanowires. The higher barrier was successfully decreased by adopting a higher doping concentration as well as wider constriction patterns. Consequently, we can control the quantum dot formation in the suspended nanowire and successfully defined a single-quantum dot by patterning the double constrictions on the heavily doped suspended nanowire.
- 2010-04-25
著者
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KODERA Tetsuo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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Ken Uchida
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Ken Uchida
Department of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Ogi Jun
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Ghiass Mohammad
School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K.
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Yoshishige Tsuchiya
School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K.
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Shunri Oda
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Hiroshi Mizuta
School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K.
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Tetsuo Kodera
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Kodera Tetsuo
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Jun Ogi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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