Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
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概要
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We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, $N_{\text{S}}$, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of $N_{\text{S}}$ in a metal--oxide--semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.
- 2011-04-25
著者
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Yamahata Gento
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Kodera Tetsuo
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Yamahata Gento
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kambara Tomohiro
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Takahashi Tsunaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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