Impact of Deformation Potential Increase at Si/SiO
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概要
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The impact of deformation potential increase at metal--oxide--semiconductor (MOS) interfaces on stress effects is thoroughly studied. In our previous study, we revealed that the deformation potential (D_{\text{ac}}) of Si increases at MOS interfaces. The energy split between two- and four-fold valleys is proportional to D_{\text{ac}}. Therefore, it is considered that the D_{\text{ac}} increase at MOS interfaces has an affect on strain effects. D_{\text{ac}} effectively changes by adjusting Si-on-insulator (SOI) thickness and carrier distribution at MOS interfaces. Therefore, the SOI thickness dependence and carrier distribution dependence of electron mobility enhancement ratio (\Delta \mu_{\text{e}}/\mu_{\text{e}}) under strain are investigated. Experimental results are explained by the model including the D_{\text{ac}} increase at MOS interfaces. In addition, experimental data are well reproduced by calculation using the position-dependent-D_{\text{ac}} model. By applying uniaxial strain, effective mass, subband occupation, and intervalley scattering rate are also changed. Their effects on \Delta \mu_{\text{e}}/\mu_{\text{e}} are also discussed in this paper.
- 2013-04-25
著者
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Ohashi Teruyuki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Uchida Ken
Department of Physical Electronics, Tokyo Institute of Technology, Megro, Tokyo 152-8552, Japan
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Ohashi Teruyuki
Department of Physical Electronics, Tokyo Institute of Technology, Megro, Tokyo 152-8552, Japan
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