Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

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概要

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• In this paper, we describe the size reduction and phosphorus doping of silicon nanocrystals (SiNCs) fabricated using a very high frequency (VHF) plasma deposition system. The size reduction of SiNCs is achieved by changing the VHF plasma power. The size of SiNCs changes from 10 to 5 nm. We discuss the relationship between VHF plasma power and the size of SiNCs in terms of radicals in the VHF plasma, such as SiH3, SiH2, SiH, and H. On the other hand, we have fabricated phosphorus-doped SiNCs by adding PH3 gas diluted with Ar gas. To confirm where phosphorus atoms are located, electrically detected magnetic resonance (EDMR) measurements are conducted. We have observed a hyperfine interaction between unpaired electrons and phosphorus atoms and enhanced hyperfine splitting owing to a quantum size effect. As a result, we can conclude that phosphorus atoms exist at substitutional sites of SiNCs and they act as donors.

• 2011-02-25

著者

• Brandt Martin

  Walter Schottky Institut Technische Universitat Munchen

• Oda Shunri

  Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology

• Uchida Ken

  Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-Okayama, Meguro, Tokyo 152-8552, Japan

• Kodera Tetsuo

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan

• Kodera Tetsuo

  Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan

• Nakamine Yoshifumi

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan

• Inaba Naoki

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan

• Pereira Rui

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

• Stegner Andre

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

• Stutzman Martin

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

• Pereira Rui

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

• Stegner Andre

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

• Oda Shunri

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan

• Brandt Martin

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

• Nakamine Yoshifumi

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• Oda Shunri

  Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan

• Stutzman Martin

  Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany

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