Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
スポンサーリンク
概要
- 論文の詳細を見る
The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated. By conducting a three-dimensional finite element mechanical simulation combined with an electrostatic analysis, we analyze the electromechanical switching operation of a mechanically bistable NEM floating gate by applying gate voltage. We show that switching voltage can be reduced to less than 10 V by reducing the zero-bias displacement of the floating gate and optimizing the cavity structure to improve mechanical symmetry. We also analyze the electrical readout property of the NEM memory devices by combining the electromechanical simulation with a drift-diffusion analysis. We demonstrate that the mechanically bistable states of the floating gate can be detected via the changes in drain current with an ON/OFF current ratio of about $3 \times 10^{4}$.
- 2009-11-25
著者
-
Arai Tadashi
Central Research Laboratory Hitachi Ltd.
-
Tsuchiya Yoshishige
School Of Electronics And Computer Science University Of Southampton
-
Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
-
Saito Shinichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
-
Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
-
Nagami Tasuku
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Shimada Toshikazu
Quantum 14 Co., Ltd., Koganei, Tokyo 184-8588, Japan
-
Tsuchiya Yoshishige
School of Electronics and Computer Science, University of Southampton, SO17 1BJ Southampton, U.K.
-
Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
関連論文
- Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5K
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
- Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
- Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors
- Vapor-Liquid-Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si_2H_6
- Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout
- Control of electrostatic coupling observed for Si double quantum dot structures
- Electro-Luminescence from Ultra-Thin Silicon
- Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles
- Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
- Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
- Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
- Scaling Analysis of Nanoelectromechanical Memory Devices
- Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
- Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
- Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
- Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots
- Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique
- Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor
- Size-Dependent Structural Characterization of Silicon Nanowires
- Electro-Luminescence from Ultra-Thin Silicon
- Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures
- Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-Site Quantum Wire
- A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (Special Issue : Solid State Devices and Materials (1))
- Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature
- Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System
- Growth of Narrow and Straight Germanium Nanowires by Vapor--Liquid--Solid Chemical Vapor Deposition
- Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
- Impact of Deformation Potential Increase at Si/SiO
- Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
- Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons (Special Issue : Solid State Devices and Materials)
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)