Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-Site Quantum Wire
スポンサーリンク
概要
- 論文の詳細を見る
We derive the nonequilibrium transport property formulas for a three-site quantum wire model using Keldysh formalism. Some rigorous formulas in the case of noninteraction are provided for direct calculations. On the basis of the numerical calculations, we investigate the differential and total conductances, transport current, and on-site electronic charges of a wire in some special cases. For a uniform-ingredient wire, if the temperature $T=0$ K, it shows that, when site–site couplings in the wire are stronger than wire–electrode couplings, resonant tunneling transport takes place and the phenomenon of conductance quantization can be easily observed. In the opposite case, these quantum effects on transport disappear gradually with the increase in the strength of wire–electrode couplings. We also discuss the charge distributions in the three sites of the wire and the characteristics of the charge barrier (Schottky barrier) regardless of Coulomb interaction. If $T>0$ K, all the line shapes of the transport properties become smoother than those at $T=0$ K owing to thermal fluctuations. For a wire containing impurities, the line shapes of the transport properties change because of the change of system electronic states.
- 2008-01-25
著者
-
Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
-
Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
-
Mizuta Hiroshi
School of Electronics and Computer Science, Southampton University, Highfield, Southampton Hampshire SO17 1BJ, U.K.
-
Zheng Yangdong
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
-
Oda Shunri
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
-
Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
関連論文
- Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5K
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
- Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
- Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors
- Vapor-Liquid-Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si_2H_6
- Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout
- Control of electrostatic coupling observed for Si double quantum dot structures
- Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
- Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
- Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
- Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
- Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
- Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
- Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots
- Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique
- Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor
- Size-Dependent Structural Characterization of Silicon Nanowires
- Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures
- Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-Site Quantum Wire
- A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (Special Issue : Solid State Devices and Materials (1))
- Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature
- Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System
- Growth of Narrow and Straight Germanium Nanowires by Vapor--Liquid--Solid Chemical Vapor Deposition
- Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
- Impact of Deformation Potential Increase at Si/SiO
- Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
- Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons (Special Issue : Solid State Devices and Materials)
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)