Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
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概要
- 論文の詳細を見る
Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-02-01
著者
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Fu Ying
Microelectronics Center At Chalmers And Department Of Physics University Of Goteborg And Chalmers Un
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Salem Mohamed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Willander Magnus
Microelectronics Center At Chalmers And Department Of Physics University Of Goteborg And Chalmers Un
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Mizuta Hiroshi
Department Of Orthopaedic And Neuro-musculoskeletal Surgery Faculty Of Medical And Pharmaceutical Sc
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Oda Shunri
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Salem Mohamed
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Willander Magnus
Microelectronics Center at Chalmers and Department of Physics, University of Goteborg and Chalmers University of Technology, Fysikgrdand 3, S-412 96 Goteborg, Sweden
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Fu Ying
Microelectronics Center at Chalmers and Department of Physics, University of Goteborg and Chalmers University of Technology, Fysikgrdand 3, S-412 96 Goteborg, Sweden
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