Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
SURAWIJAYA Akhmadi
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
-
MIZUTA Hiroshi
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
-
ODA Shunri
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
-
Oda S
Tokyo Inst. Technol. Tokyo Jpn
-
Oda Shunri
The Graduate School At Nagatsuta Tokyo Institute Of Technology
-
Oda Shunri
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Mizuta Hiroshi
Department Of Orthopaedic And Neuro-musculoskeletal Surgery Faculty Of Medical And Pharmaceutical Sc
-
Surawijaya Akhmadi
Department Of Physical Electronics And Quantum Nanoelectronics Research Center Tokyo Institute Of Te
-
Oda Shunri
Department Of Physical Electronics And Quantum Nanoelectronics Research Center Tokyo Institute Of Te
-
Mizuta Hiroshi
Department Of Physical Electronics And Quantum Nanoelectronics Research Center Tokyo Institute Of Te
関連論文
- 26aXG-4 シリコン結合量子ドットの電子輸送特性評価(量子ドット,領域4,半導体,メゾスコピック系・局在)
- Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot (Special Issue: Solid State Devices & Materials)
- Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot
- HfO_2薄膜成長過程の分光エリプソメトリによるその場観察と第一原理計算との比較(ゲート絶縁膜, 容量膜, 機能膜及びメモリ技術)
- 21世紀の単電子デバイス
- 電子材料-ナノシリコンとネオシリコン
- ULSI技術は電気化学の時代
- Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
- Electron Transport in Nanocrystalline Si Based Single Electron Transistors
- Single-Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process
- ナノクリスタルシリコンによる単電子デバイス
- Electric Field-Effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step-Edge Junctions
- Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO_3 Films with a Very Smooth Surface
- Electric Properties of Coplanar High-T_c Superconducting Field-Effect Devices
- 単電子デバイス・回路の研究状況と今後の展望
- MOCVD法による酸化物超伝導薄膜のエピタキシャル成長(酸化物のエピタキシー)
- 酸化物超伝導体の原子層MOCVD法における光学的その場成長モニタ- (原子レベルでの結晶成長機構) -- (成長表面と界面構造)
- 27pC2 水素プラズマ処理による微結晶シリコンの核形成と成長(気相成長III)
- CVDによる酸化物超伝導体のlayer by layer成長とin situ光学モニタ-
- マイクロエレクトロニクス学生実験 (基礎研究特集号) -- (基礎研究と大学教育)
- Si微粒子のカソードルミネッセンス
- シリコン技術
- 1)アモルファス・シリコン系アロイの光導電性(テレビジョン電子装置研究会(第125回))
- 強磁場印加による(110)pMOSFETサブバンド構造の直接的観測(IEDM特集(先端CMOSデバイス・プロセス技術))
- 24aWQ-2 Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure
- 24aWQ-3 PdショットキーゲートによるSi/SiGe量子ドットの作製とその評価(24aWQ 量子ドット,領域4(半導体メゾスコピック系・局在))
- Analyses of early events during chondrogenic repair in rat full-thickness articular cartilage defects
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- ディジタルプロセスによる微結晶シリコンの作製と量子効果超集積デバイスへの応用
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
- Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition
- ナノクリスタルシリコンによる単電子デバイス
- In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x
- In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films
- Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films
- Generation of Electron Cyclotron Resonance Plasma in the VHF Band
- Two-Gate Transistor for the Study of Si/SiO_2 Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
- Preparation Method and Optoelectrical Properties of a-Se/Cd_xSe_ Multilayer Films
- Design of Band Potential with a-Si_xGe_:H(F) Alloys
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
- Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
- Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
- Epitaxial Growth of YBaCuO Films on Sapphire at 500℃ by Metalorganie Chemical Vapor Deposition
- Hole Transport in Silicon Thin Films with Variable Hydrogen Content
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
- Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition
- Preparation of Highly Photoconductive a-SiGe_x from Fluorides by Controlling Reactions with Atomic Hydrogen
- Designing New Materials with Amorphous Semiconductors : Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGe_x Layers
- The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys
- Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols
- Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma ( Quantum Dot Structures)
- Evaluation of Deep States in Amorphous-Silicon / Silicon-Nitride System from Charge-Coupled Device Characteristics : Semiconductors and Semiconductors Devices
- p-Channel Amorphous Silicon Thin-Film Transistors with High Hole Mobility : Semiconductors and Semiconductor Devices
- Properties of Metalorganic Precursors for Chemical Vapor Deposition of Oxide Superconductors
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices
- Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure
- Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon : Techniques, Instrumentations and Measurement
- Fabrication of MOS Nanostructure by Employing Electron Beam Lithography and Anisotropic Wet Etching of Silicon
- シリコンナノ結晶のCVD成長と新機能 (特集 ナノ結晶の成長と新機能)
- Stabilization of Oxygen Diffusion in Ga-Doped YBa_2Cu_3O_ Thin Films Observed by Spectroscopic Ellipsometry
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
- TFTとその応用
- アモルファスシリコンを用いた薄膜トランジスタとその集積回路
- シリコンナノ結晶のCVD成長と新機能(ナノ結晶の成長と新機能)
- Morphological study, by teasing examination, of the communication from the musculocutaneous to median nerves
- Morphological study of the communication between the musculocutaneous and median nerves
- Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition
- Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics
- Preparation of YBa_2Cu_3O_x Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition
- Hybrid simulation of the RF-SET and its charge sensitivity analysis
- Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing
- Nanometer Patterning by Electron Beam Lithography Using an Amorphous Carbon Film as an Intermediate Layer
- Electronic States In Glow-Discharge a-SiGe_x:H:(F) Alloys
- Diabetes with hyperlipidemia : a risk factor for developing joint contractures secondary to immobility in rat knee joints?
- Requirement of fibroblast growth factor signaling for regeneration of epiphyseal morphology in rabbit full-thickness defects of articular cartilage
- Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers
- Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon
- 高不純物濃度のETSOI (Extremely-thin SOI)拡散層における移動度の異常な振る舞い(IEDM特集(先端CMOSデバイス・プロセス技術))
- Theory of Spin-Polarized Auger Electrons from Ferromagnetic Materials
- 28aHD-1 Si/SiGe量子ドットにおけるショットキーゲート電極に対する考察(28aHD 量子ドット,領域4(半導体,メゾスコピック系・局在))
- The Effect of Cation Vacancies on the Magnetic Annealing of Co_xFe_O_4
- 24aTR-2 Si/SiGe 2重量子ドットにおける高周波応答について(24aTR 量子ドット,領域4(半導体,メゾスコピック系・局在))
- 23pTM-12 シリコン量子ドットにおけるスピン効果と磁場依存性(23pTM 量子ドット,領域4(半導体,メゾスコピック系・局在))
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
- Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
- Os Trigonum Syndrome in a Classical Ballet Dancer
- A genome-wide sib-pair linkage analysis of ossification of the posterior longitudinal ligament of the spine