Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-10-01
著者
-
ODA Shunri
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
-
Oda Shunri
Department Of Physical Electronics Tokyo Institute Of Technology
-
OTOBE Masanori
Department of Physical Electronics, Tokyo Institute of Technology
-
Oda Shunri
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Otobe Masanori
Department Of Physical Electronics Tokyo Institute Of Technology
関連論文
- Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x
- In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films
- Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films
- Generation of Electron Cyclotron Resonance Plasma in the VHF Band
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
- Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
- Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
- Epitaxial Growth of YBaCuO Films on Sapphire at 500℃ by Metalorganie Chemical Vapor Deposition
- Evaluation of Deep States in Amorphous-Silicon / Silicon-Nitride System from Charge-Coupled Device Characteristics : Semiconductors and Semiconductors Devices
- p-Channel Amorphous Silicon Thin-Film Transistors with High Hole Mobility : Semiconductors and Semiconductor Devices
- Properties of Metalorganic Precursors for Chemical Vapor Deposition of Oxide Superconductors
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices
- Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure
- Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon : Techniques, Instrumentations and Measurement
- Fabrication of MOS Nanostructure by Employing Electron Beam Lithography and Anisotropic Wet Etching of Silicon
- Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition
- Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics
- Preparation of YBa_2Cu_3O_x Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition
- Hybrid simulation of the RF-SET and its charge sensitivity analysis
- Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing
- Nanometer Patterning by Electron Beam Lithography Using an Amorphous Carbon Film as an Intermediate Layer
- Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
- Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot