Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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ODA Shunri
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
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Zhang H
Tsinghua Univ. Beijing Chn
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Kanoh Hiroshi
Department of Cardiology, Oume City General Hospital
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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UCHIDA Yasutaka
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Hattori Takeo
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Kanoh Hiroshi
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)display Device Res
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Kanoh Hiroshi
Functional Devices Research Laboratories Nec Corporation
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SUGIURA Osamu
Department of Physical Electronics, Tokyo Institute of Technology
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ZHANG Hongyong
Department of Physical Electronics, Tokyo Institute of Technology
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Zhang H
Shandong Univ. Jinan Chn
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Zhang Hongyong
Department Of Physical Electronics Tokyo Institute Of Technology
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Oda Shunri
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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Uchida Yasutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Zhang Hankun
Graduate School Of Decision Science And Technology Tokyo Institute Of Technology
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Kanoh Hiroshi
Department Of Cardiology Oume City Hospital
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Zhang Hankun
State Key Laboratory of Crystal Materials and Institute of Crystal Materials
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