The Annealing Effects of Excimer-Laser-Produced Large-Grain Poly-Si Thin-Film Transistors
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概要
- 論文の詳細を見る
Annealing effects have been studied for thin-film transistors (TFTs) with excimer-laser recrystallized large-grain poly-Si films. Electron field-effect mobility of about 350 cm^2/V・s, i.e., much higher than the typical value, can be obtained by simple vacuum anneal. Effects of atomic hydrogen and molecular hydrogen anneals are also identified.
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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CHOI Do-Hyun
Department of Physical Electronics, Tokyo Institute of Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Choi Do-hyun
Department Of Physical Electronics Tokyo Institute Of Technology
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