Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors
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概要
- 論文の詳細を見る
A new method has been proposed for fabricating short-channel amorphotus-silicon vertical thin-film transistors(TFTs). The chanxael is formed at the side wall of the gate electrode, but the soturce and drain are formed on the flat glass and the gate electrode regions, respectively. Dtue to the desirable shadowing effects of the side wall,the channel remains in an amorphous state, bvut the source and drain are crystallized selectively by excimer-laser irradiation. The 1.5 μm-long TFTs had field-effect mobility as high as 0.7cm^2/(V・s) and no current crowding effects.
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Saitoh Akihiko
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Saitoh Akihiko
Department Of Pediatrics St Luke's International Hospital
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