Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Kanoh Hiroshi
Department of Cardiology, Oume City General Hospital
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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Kanoh Hiroshi
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)display Device Res
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Kanoh Hiroshi
Functional Devices Research Laboratories Nec Corporation
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SUGIURA Osamu
Department of Physical Electronics, Tokyo Institute of Technology
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BREDDELS Paul
Department of Physical Electronics, Tokyo Institute of Technology
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YASUKAWA Masahiro
Department of Physical Electronics, Tokyo Institute of Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Breddels Paul
Department Of Physical Electronics Tokyo Institute Of Technology
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kanoh Hiroshi
Department Of Cardiology Oume City Hospital
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Yasukawa Masahiro
Department Of Materials Science And Engineering Kochi National College Of Technology
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Yasukawa Masahiro
Department Of Physical Electronics Tokyo Institute Of Technology
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