Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films
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概要
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60-μm-long grains were grown laterally in a 50-nm-thick Si layer on thermally grown oxide by a single shot irradiation of an excimer-laser-light pulse. The origin of such a marked (about 10 times) enlargement of grains can be found in a newly introduced photosensitive capping layer on the Si layer, which has been heated uniformly to extremely high temperatures by absorbing a fraction of excimer-laser-light and gradually transfers the stored heat to the Si layer after the laser irradiation, resulting in the extension of the liquid-phase duration of the Si layer. Ultrathinning the Si layer can effectively reduce the lateral heat loss along the highly heat-conductive, liquid or crystallized Si layer, and, in turn, extend the liquid-phase duration further. SiON and SiOC films are good candidates for the photosensitive capping layer, although SiOC is preferable since it can be etched by a buffered HF solution and has an appropriate light absorption coefficient for a broad band of laser-light-wavelengths. [DOI: 10.1143/JJAP.41.1909]
- 2002-04-15
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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YEH Wenchang
Department of Physical Electronics, Tokyo Institute of Technology:(Present)Department of Electrical Engineering, National Yunlin University of Science and Technology
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MATSUMURA Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology:(Present)Advanced LCD Technologies Development Center Co., Ltd.
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Yeh Wenchang
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan
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