Homoepitaxial Growth of InSb by Vacuum Metal-Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Homoepitaxial growth of InSb using metal-organic vapor under a total gas pressure of about 10^<-3> Torr has been investigated. Single crystal films with smooth surface were obtained at substrate temperatures of as low as 400℃. The conduction type and impurity density of the epitaxial layer evaluated by Metal-Oxide-Semiconductor Capacitance-Voltage (MOS C-V) method were p-type and 2×10^<15>cm^<-3>, respectively, at 77 K.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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