Hydrogen-Free Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO)_4)
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概要
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Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetraisocyanate-silane (Si(NCO)_4 : TICS) and oxygen for interlayer dielectric film application is proposed. Film properties strongly depend on the gas composition. The film which was deposited under an oxygen-rich condition was water-free after deposition. The film density, refractive index, resistivity, and dielectric constant were 2.3 g/cm^3, 1.46, 5×10^<14> Ω・cm, and 3.6, respectively. The etch rate by buffered HF was 330 nm/min.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Idris Irman
Department Of Physical Electronics Tokyo Institute Of Technology
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