A Novel Post-Hydrogenation Process for Chemical-Vapor-Deposited a-Si Thin-Film Transistors
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概要
- 論文の詳細を見る
A novel post-hydrogenation method for chemical-vapor-deposited amorphous-silicon (CVD a-Si) thin-film transistors (TFTs) has been proposed. Samples were annealed in the presence of the atomic hydrogen generated by a hot tungsten filament. The dependence of the amount of adsorbed hydrogen on annealing period, filament temperature and total gas pressure was described. A-Si TFTs which were post-hydrogenated by means of the hot-filament method showed an electron mobility of 1.1 cm^2/V・s. The lifetime and diffusion length of atomic hydrogen were estimated.
- 社団法人応用物理学会の論文
- 1993-07-15
著者
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松村 正清
東京工業大学工学部:(現)(株)液晶先端技術開発センター
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SHIRAIWA Toshiaki
Department of Physical Electronics, Tokyo Institute of Technology
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松村 正清
東京工業大学工学部電子物理科
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Shiraiwa T
Department Of Physical Electronics Tokyo Institute Of Technology
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