Sub-Atomic Layer Growth of SiC at Low Temperatures
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概要
- 論文の詳細を見る
Sub-atomic layer growth of SiC has been achieved using diethylsilane ((C_2H_5)_2SiH_2) by resolving elemental kinetics of its chemical vapor deposition. The growth rate of 0.1 monolayer/cycle was obtained over the temperature range between 590℃ and 675℃. The detailed growth characteristics, the composition of the grown film, and the surface morphology have been presented. The initial growth and the coverage of the grown film were also investigated by X-ray photoelectron spectroscopy.
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Imai Shigeru
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Sadayuki Eiichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Imai Shigeru
Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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