Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors
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概要
- 論文の詳細を見る
A new low-temperature method of thermal-oxidation for amorphous-silicon has been proposed, and preliminary experimental results on its application to amorphous-silicon MOS transistors are presented. The resistivity of the oxide was over 10^<14> Ωcm and the field-effect mobility deduced from the saturation region of the transistor characteristics was 0.003 cm^2/Vs .
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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UCHIDA Yasutaka
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ikegami Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Uchida Yasutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ikegami Takashi
Department Of General Systems Sciences Graduate School Of Arts And Sciences The University Of Tokyo
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