Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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松村 正清
東京工業大学工学部:(現)(株)液晶先端技術開発センター
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Choi D‐h
Kyungpook National Univ. Daegu Kor
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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SUGIURA Osamu
Department of Physical Electronics, Tokyo Institute of Technology
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Choi D‐h
School Of Electrical Engineering And Computer Science Kyungpook National University
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CHOI Do-Hyun
Department of Physical Electronics, Tokyo Institute of Technology
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SADAYUKI Eiichi
Department of Physical Electronics, Tokyo Institute of Technology
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松村 正清
東京工業大学工学部電子物理科
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Choi Do-hyun
Department Of Physical Electronics Tokyo Institute Of Technology
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sadayuki E
Tokyo Inst. Technol. Tokyo Jpn
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Sadayuki Eiichi
Department Of Physical Electronics Tokyo Institute Of Technology
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- Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate
- A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application
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- Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
- Step-Covertage Characteristics of Silicon-Dioxide Films Formed by a New Low-Temperature Chemical-Vapor-Deposition Method
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- 応用物理学会の現状と課題
- Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements
- Low-Temperature Thermal-Oxidation of Silicon
- Electronic Structures of Si-Based Manmade Crystals
- Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
- Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
- Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films
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