High-Mobility Amorphous-Silicon MUS Transistors
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概要
- 論文の詳細を見る
Process conditions for gate oxide formation in amorphous-silicon MOS transistors have been investigated systematically. It was found that the n^+ micro-crystal silicon layer just above the active transistor region should be removed before the gate oxidation at 250℃. Annealings in nitrogen ambient just after the oxidation and in hydrogen ambient after gate electrode evaporation were also effective. The highest field-effect mobility measured by the transistor fabricated under the optimum process conditions was about 4.8 cm^2/Vs. Dynamic response characteristics have also been evaluated.
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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Okada Hiroyuki
Department Of Cardiology Musashino Red Cross Hospital
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Okada H
Univ. Toyama Toyama Jpn
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Okada H
Faculty Of Engineering University Of Toyama
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Uchida Yasutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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