Formation of Atomically Abrupt Si/Ge Hetero-Interface

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• 菅原 聡

  Department Of Electronic Engineering The University Of Tokyo

• 松村 正清

  東京工業大学工学部:(現)(株)液晶先端技術開発センター

• Ikeda K

  Mitsubishi Electric Corp. Hyogo Jpn

• Matsumura Masakiyo

  Department of Physical Electronics, Tokyo Institute of Technology

• SUGAHARA Satoshi

  Department of Physical Electronics, Tokyo Institute of Technology

• Ikeda Keisuke

  Institute For Materials Research Tohoku University

• UCHIDA Yasutaka

  Dept. of Electronics and Information Science, Nishi-Tokyo Univ.

• Ikeda Keiji

  Department Of Physical Electronics Tokyo Institute Of Technology

• NAGAI Tomonori

  Dept. of Electr. and Inform. Sci., Teikyo University of Science and Technology

• Sugahara Satoshi

  Department Of Electronic Engineering The University Of Tokyo

• 松村 正清

  東京工業大学工学部電子物理科

• Matsumura Masakiyo

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Nagai Tomonori

  Department Of Electronics And Information Science Teikyo University Of Science And Technology

• Nagai T

  Department Earth And Space Science Graduate School Of Science Osaka University

• Uchida Y

  Aichi Inst. Technol. Toyota Jpn

• Uchida Y

  Department Of Electrical Engineering Aichi Institute Of Technology Toyota

• Uchida Y

  Yamaguchi Univ. Yamaguchi Jpn

• Ikeda Keiji

  Department of Pathology, Ehime University School of Medicine

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