Electrical Properties of Ultralarge Grairn Polycrystalline Silicon Film Produced by Exeimer-Laser Recrystallization Method
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概要
- 論文の詳細を見る
Electrical properties have been evaluated for polysilicon films from temperature dependence of the field-effect mobility. Density of the defect states at the grain boundary (GB) could be calculated as a function of energy for vacuum-, molecular-hydrogen- and atomic-hydrogen-annealed films. Defect states were distributed strongly near 0.14 eV below the conduction band and decreased steeply with more closer to the mid-gap. The GB was found to have no serious effect on electron and hole transport characteristics after hydrogenation.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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IMAI Shigeru
Department of Surgery, Tokyo Hospital
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CHOI Do-Hyun
Department of Physical Electronics, Tokyo Institute of Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Choi Do-hyun
Department Of Physical Electronics Tokyo Institute Of Technology
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Imai Shigeru
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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