Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor
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概要
- 論文の詳細を見る
We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film was fabricated using ArF excimer-laser crystallization of Si in oxygen ambient for application to the homo TFT. It was found that both the on-current and the off-current can be controlled by crystallization conditions.
- 社団法人応用物理学会の論文
- 1995-07-15
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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CHOI Kwangsoo
Department of Physical Electronics, Tokyo Institute of Technology
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Choi K
Inha Univ. Incheon Kor
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Choi Kwangsoo
Department Of Physical Electronics Tokyo Institute Of Technology
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