A Low-Temperature Dehydration Method of Silica Films : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
XeF_2 has been proposed as a catalyst for low-temperature dehydration of SiO_2 films. The critical dehydration temperature was about 200℃ less XeF_2 dehydration-annealing than for vacuum dehydration-annealing. The SiO_2 film deposited from tetraethylorthosilicate (TEOS) and ozone at 270℃ showed OH-free and good insulating characteristics after XeF_2-annealing at 400℃.
- 社団法人応用物理学会の論文
- 2001-01-15
著者
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Sugahara Satoshi
Department Of Electronic Engineering The University Of Tokyo
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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FUKUMURA Tatsuya
Department of Physical Electronics, Tokyo Institute of Technology
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Fukumura Tatsuya
Department Of Physical Electronics Tokyo Institute Of Technology
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