Electrical and Optical Control of Ferromagnetism in III-V Semiconductor Heterostructures at High Temperature (${\sim}100$ K)
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概要
- 論文の詳細を見る
We demonstrate the electrical and optical control of ferromagnetism in semiconductor heterostructures at high temperatures of 100–117 K. The heterostructures consist of Mn delta ($\delta$)-doped GaAs and $p$-type AlGaAs. We are able to isothermally change the paramagnetic state to the ferromagnetic state and vice versa, by applying a gate electric-field or by light irradiation. The large modulation of $T_{\text{C}}$ ($\Delta T_{\text{C}}\sim 15$ K) at high temperatures ($>{\sim}100$ K) demonstrated here may pave the way for functional device applications compatible with the present semiconductor technology.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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Sugahara Satoshi
Department Of Electronic Engineering The University Of Tokyo
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Kobayashi Shigeki
Department Of Analytical Chemistry Of Medicines Showa Phamaceutical University
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Nazmul Ahsan
Department Of Electronic Engineering The University Of Tokyo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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Sugahara Satoshi
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Nazmul Ahsan
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kobayashi Shigeki
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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