Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge–Mn intermetallic compounds, such as Mn5Ge3. Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p–d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy analyses show phase separation of amorphous Ge1-xMnx clusters with high Mn content from a Mn-free monocrystalline Ge matrix. Since amorphous Ge1-xMnx was characterized as a homogeneous ferromagnetic semiconductor, the precipitation of the amorphous Ge1-xMnx clusters is the origin of the ferromagnetic semiconductor behavior of the epitaxially grown Mn-doped Ge films.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-11-10
著者
-
Sugahara Satoshi
Department Of Electronic Engineering The University Of Tokyo
-
Lee Kok
Department Of Electronic Engineering The University Of Tokyo
-
Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
-
Yada Shinsuke
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
-
Yada Shinsuke
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
関連論文
- A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application
- Role of lactate in the brain energy metabolism : revealed by Bioradiography
- Method estimating reflection coefficients of adaptive lattice filter and its application to system identification
- Thymosin-α1 increases intrahepatic NKT cells and CTLs in patients with chronic hepatitis B
- Thrombopoietin receptor (c-Mpl) is constitutively expressed on platelets of patients with liver cirrhosis, and correlates with its disease progression
- Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Field-Effect Transistors
- Chemical Vapor Deposition Based Preparation on Porous Silica Films
- Atomic-Layer Epitaxy of Silicon on(100)Surface
- Hetero Atomic-Layer Epitaxy of Ge on Si(100)
- A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant
- Formation of an Atomically Abrupt Si/Ge Hetero-Interface
- Formation of Atomically Abrupt Si/Ge Hetero-Interface
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
- A Proposed Atomic-Layer-Deposition of Germanium on Si(100)
- High-Resolution Transmission Electron Microscopy of AlAs/GaAs Imterfacial Structure in the Projection
- The Majority of Lymphocytes in the Bone Marrow, Thymus and Extrathymic T Cells in the Liver Are Generated In Situ from Their Own Preexisting Precursors
- A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET
- Magnetic Semiconductors and Heterostructures for Spin Electronics
- Electronic Structures of Si-Based Manmade Crystals
- Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- Survival of Three Nonocclusive Mesenteric Ischemia Patients following Early Diagnosis by Multidetector Row Computed Tomography and Prostaglandin E1 Treatment
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- IS-32 Regulation of Telomerase Activity by Sex Steroid Hormones
- Synthesis of Biaryls and Oligoarenes Using Aryl[2-(hydroxymethyl)phenyl]dimethylsilanes
- Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge(111)
- Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films
- Magnetooptical Kerr Effect of Semiconductor-Based Multilayer Structures Containing a GaAs:MnAs Granular Thin Film
- Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
- A Low-Temperature Dehydration Method of Silica Films : Electrical Properties of Condensed Matter
- Planar Hall Effect and Magnetic Anisotropy in a Mn δ-doped GaAs/p-AlGaAs Heterostructure
- Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As : Semiconductors
- Scaling Properties of Type-II Intermittency
- Reconfigurable Logic Gates Using Single-Electron Spin Transistors
- Relationship between cognitive functions and prevalence of fatigue in elementary and junior high school students
- Changes in cognitive functions of students in the transitional period from elementary school to junior high school
- Tunneling Magnetoresistance in a Mn $\delta$-doped GaAs/AlAs/MnAs Heterostructure
- Critical Behavior of Complex Logarithmic Map
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates
- Electrical and Optical Control of Ferromagnetism in III-V Semiconductor Heterostructures at High Temperature (${\sim}100$ K)
- In-Plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect
- Spin-Filter Transistor
- Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films
- Atomic-Layer Epitaxy of Silicon on (100) Surface