Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As : Semiconductors
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概要
- 論文の詳細を見る
We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs substrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below 〜 30 K, exhibiting a strong magneto-optical effect. The lattice constant of [(In_yGa_<1-y>)_<1-x>Mn_x]As, whose Mn concentration x is below 4%, is slightly smaller than that of In_yGa_<1-y>As with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III-V opto-electronics.
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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TANAKA Masaaki
Department of Physiology, Osaka City University Graduate School of Medicine
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Shimizu Hiromasa
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Tanaka M
Advanced Photon Research Center Kansai Research Establishment Japan Atomic Energy Research Institute
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Shimizu H
Department Of Electronic Engineering The University Of Tokyo
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Ohya Shinobu
Department Of Electronic Engineering The University Of Tokyo
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HIGO Yutaka
Department of Electronic Engineering, The University of Tokyo
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SUN Jiaming
Department of Electronic Engineering, The University of Tokyo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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Sun Jiaming
Department Of Electronic Engineering The University Of Tokyo
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Higo Yutaka
Department Of Electronic Engineering The University Of Tokyo
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Ohya Shinobu
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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