Reduced Threshold Current and Enhanced Extinction Ratio in a Magnetically Controllable Fe50Co50--InGaAlAs/InP Nonreciprocal Semiconductor Laser
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概要
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We report on reduced threshold current and enhanced extinction ratio of a magnetically controllable Fe50Co50--InGaAlAs/InP nonreciprocal semiconductor laser. The improved device performance was consistent with calculated results for the modified layer structure and the use of ferromagnetic metal (Fe50Co50). The fabricated laser showed a threshold current 2.0 times smaller than our previous device having Fe. The extinction ratio, defined as the change in light intensity upon magnetization reversal, increased upon the appearance of the first-order transverse mode and reached 46% at a current of 100 mA. The reduced threshold current and enhanced extinction ratio should be useful for realizing low-operating-current, all-optical, robust signal processing devices using nonreciprocal semiconductor lasers.
- 2012-02-25
著者
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Shimizu Hiromasa
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Uehara Keishi
Department Of Dermatology And The Research Center Of Comprehensive Medicine Faculty Of Medicine Univ
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Tazawa Komei
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Sakanishi Shohei
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Uehara Keishi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Shimizu Hiromasa
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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