Magnetooptical Kerr Effect of Semiconductor-Based Multilayer Structures Containing a GaAs:MnAs Granular Thin Film
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概要
- 論文の詳細を見る
We have calculated magnetooptical properties of semiconductor-based multilayer structures having GaAs:MnAs nanoclusters sandwiched between GaAs/AlAs distributed Bragg reflectors (DBRs). Very large magnetooptical Kerr effects (Kerr rotation and ellipticity) are predicted in the multilayer structures with suitable DBR period numbers. Based on our calculation, we have grown multilayer structures by molecular beam epitaxy, and have demonstrated a very large Kerr effect (the maximum Kerr rotation is 1.54 degrees) at a designed wavelength of ${\sim}980$ nm under a relatively low magnetic field at room temperature.
- Japan Society of Applied Physicsの論文
- 2003-08-01
著者
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TANAKA Masaaki
Department of Physiology, Osaka City University Graduate School of Medicine
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Shimizu Hiromasa
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Shimizu Hiromasa
Department Of Electronic Engineering The University Of Tokyo
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Ueda Kazuhiko
Department Of Crown And Bridge School Of Life Dentistry At Niigata The Nippon Dental University
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Ueda Kazuhiko
Department Of Electronic Engineering The University Of Tokyo
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Tanaka Masaaki
Department Of Electronic Engineering The University Of Tokyo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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