Tunneling Magnetoresistance in a Mn $\delta$-doped GaAs/AlAs/MnAs Heterostructure
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概要
- 論文の詳細を見る
We studied the tunneling magnetoresistance (TMR) of a hybrid heterostructure consisting of Mn $\delta$-doped GaAs/AlAs/MnAs, and compared with that of a (Ga,Mn)As/AlAs/MnAs heterostructure. The former heterostructure showed a maximum TMR ratio of 43.9% at 2.6 K, indicating that the carriers in the Mn $\delta$-doped GaAs are spin-polarized. Furthermore, the magnetic properties of both heterostructures were investigated through the TMR characteristics with varying the direction of the applied magnetic field. The difference in anisotropic behavior between the two heterostructures could be due to the difference in the Mn distribution in the Mn-doped GaAs layers.
- Japan Society of Applied Physicsの論文
- 2007-08-25
著者
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Kondo Jun
Department Of Pathology Hirosaki University School Of Medicine
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Nakane Ryosho
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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Nakane Ryosho
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kondo Jun
Department of Pathology and Bioscience, Hirosaki University Graduate School of Medicine
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Tanaka Masaaki
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kondo Jun
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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