Spin-Lattice Relaxation of Donor Electrons in Silicon

スポンサーリンク

概要

• 論文の詳細を見る

• The spin-lattice relaxation of donor electrons in silicon is investigated. The relaxation rate is calculated using the adiabatic approximation, in which the electronic wave function is determined instantaneously according to the Hamiltonian which is perturbed by the lattice deformation. The rate thus obtained was found to be equal to that obtained when we take a simple product of the electronic and the lattice wave functions as a starting wave function and take the electron-lattice interaction as a perturbation. We considered the modulation of the spin-orbit coupling due to the lattice vibration as well as deformation of the donor wave function due to the external magnetic field. When we consider one-phonon process, the relaxation rate was found to be proportional to H^4T, as is observed. The absolute magnitude of the rate also agrees with the observation in orders of magnitude.

• 理論物理学刊行会の論文
• 1960-07-25

著者

• Kondo Jun

  Department Of Pathology Hirosaki University School Of Medicine

• Kondo Jun

  Department Of Physics College Of Science And Engineering Nihon University

• KONDO Jun

  Department of Physics, College of Science and Engineering, Nihon University

• Kondo Jun

  Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

関連論文

• ＜Symposium I＞Vascular endothelial growth factor（ VEGF） expression is negatively regulated by basic-helix-loop-helix（ bHLH）transcription factor DEC2
• PERIOD1 is an Anti-apoptotic Factor in Human Pancreatic and Hepatic Cancer Cells
• Carrier Distribution and Oxygen Ordering in Oxide Superconductors
• Universality and Scaling Law of Localization Length in One-Dimensional Anderson Localization
• Spin-Lattice Relaxation of Donor Electrons in Silicon
• Claudin-1 Is Associated with Invasive Growth of Human Pancreatic Cancer Cells
• Tunneling Magnetoresistance in a Mn $\delta$-doped GaAs/AlAs/MnAs Heterostructure

スポンサーリンク