Theory of Charge Transfer in Amorphous-Silicon Charge-Coupled Devices
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概要
- 論文の詳細を見る
Charge transfer in amorphous-silicon charge-coupled devices is analyzed, taking the density distribution of residual electrons perpendicular to the insulator/amorphous-silicon interface into account. The high transfer inefficiency obtained experimentally is explained by this thickness effect. When the amorphous-silicon layer is as thin as 10 nm, the transfer inefficiency is predicated to approach 10^<-4> at clock frequencies of more than 10 kHz.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Uchida Yasutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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TAKEUCHI Yuusuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Takeuchi Yuusuke
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takeuchi Yuusuke
Department Of Physical Electronics Tokyo Institute Of Technology
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