Ultra-Thin Amorphous-Silicon Transistors Fabricated by Two-Step Deposition Method
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概要
- 論文の詳細を見る
Ultra-thin amorphous-silicon field-effect transistors have been fabricated using a novel two-step deposition method. Effects of the first active layer on transistor performances have been systematically investigated. Field-effect mobility of the 15 nm-thick transistor fabricated by the two-step deposition method was drastically improved in comparison with that by the conventional single-step deposition method. Operation of a 5 nm-thick transistor has also been described.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KATOH Yuukoh
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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TAKEUCHI Yuusuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Takeuchi Yuusuke
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Katoh Yuukoh
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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MATSUMURA Masakiyo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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