Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Silicon dioxide films with a high water content were deposited by chemical vapor deposition using tetraisocyanate-silane and water at substrate temperatures between 70℃ and 100℃. The films flowed upon annealing in steam at 120℃ and provided smooth topographies when the water content was higher than 8 weight percent. However, the films did not flow at all upon annealing in nitrogen.
- 社団法人応用物理学会の論文
- 1996-10-01
著者
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Haraguchi Takeshi
Department Of Physical Electronics Tokyo Institute Of Technology
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