Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry
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概要
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The effects of Cu ion concentration of the different solutions on Cu etching rate were investigated. From the dipping experiment of Cu substrates in different solutions of malic acid, hydrogen peroxide (H2O2), benzotriazole (BTA), and Cu ions, it was revealed that Cu etching rate is increased if the concentration of Cu(II) ions added in the solution is high. This is considered to be caused by the effect of Cu(II) ions on H2O2 molecules. In the solution of pH 7, the Cu etching rate increased markedly between $1.7\times 10^{-4}$ and $3.4\times 10^{-4}$ M Cu(II) ion concentrations. The maximum increase in the etching rate was from 990 to 2200 nm/min at a H2O2 concentration of 2 wt %. In the solution of pH 3, a marked change in the etching rate was not observed. Our results show that the concentration of Cu ions on the polishing pad in chemical-mechanical polishing (CMP) process is very important.
- Japan Society of Applied Physicsの論文
- 2007-04-25
著者
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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NISHIZAWA Hideaki
Department of Social Informatics, Graduate School of Informatics, Kyoto University
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Kinoshita Masaharu
Nitta Haas Incorporated, Kan-nabidai, Kyotanabe, Kyoto 610-0333, Japan
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Kinoshita Masaharu
Nitta Haas Inc., Kan-nabidai, Kyotanabe, Kyoto 610-0333, Japan
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Matsumura Yoshiyuki
Nitta Haas Incorporated, Kan-nabidai, Kyotanabe, Kyoto 610-0333, Japan
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Nishizawa Hideaki
Department of Physical Electronics, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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Matsumura Yoshiyuki
Nitta Haas Inc., Kan-nabidai, Kyotanabe, Kyoto 610-0333, Japan
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