A Deposition Mechanism of SiO_2 Chemical Vapor Deposition Using Tetra-Isocyanate Silane and Water
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概要
- 論文の詳細を見る
The deposition characteistic of SiO_2 chemical vapor deposition (CVD) using tetra-isocyanate silane can be explained by the adsorption of source gases on the substrate surface. The deposition reaction occurs in the adsorbed layer. The deposition rate of the CVD was calculated under the assumption that source gases follow the BET isotherm theory independently. The dependence of deposition rate on temperature was well consistent with he experimental data by using a reaction constant V_<SiO_2>=1000nm/min.
- 社団法人応用物理学会の論文
- 2000-09-15
著者
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Sugiura Osamu
Department Of Physical Electronics Tokyo Insititute Of Technology
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Fujimoto Akira
Department Of Physical Electronics Tokyo Insititute Of Technology
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