Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
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概要
- 論文の詳細を見る
Strain and stress at the Si surface have been studied by photoreflectance (PR) spectroscopy. A Si diaphragm structure has been fabricated in order to produce the surface strain caused by N2 gas pressure which changes the PR spectra of the Si diaphragm. The transition energy obtained from the PR peak energy of approximately 3.4 eV is proportional to the surface stress, which is calculated by elastic analysis. Additionally, PR spectroscopy was applied to measure stress at the interface between the Si and thermal oxide. As the SiO2 growth temperature increases, the interface stress decreases. From our experimental results, it is considered that PR spectroscopy is effective as a contactless and nondestructive monitoring technique for Si surface stress.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Eriguchi Koji
Ulsi Process Technology Development Center Matsushita Electronics
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Agata Masashi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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SOHGAWA Masayuki
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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YAMASHITA Kaoru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Sohgawa Masayuki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Yamashita Kaoru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Agata Masashi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Fujimoto Akira
Department of Electrical Engineering, Wakayama National College of Technology, 77 Nadacho-Noshima, Gobo, Wakayama 644-0023, Japan
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Eriguchi Koji
ULSI Process Tech. Dev. Ctr., Matsushita Electronics
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