Contactless Characterization of Fixed Charges in HfO2 Thin Film from Photoreflectance
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概要
- 論文の詳細を見る
Fixed oxide charges in HfO2 thin films have been characterized by photoreflectance spectroscopy (PRS). HfO2 films were deposited on Si by pulsed laser deposition (PLD) in N2, O2 and a mixture of these gases. PRS spectral intensity decreases with increasing positive charge in a film. HfO2 deposited in N2 has larger positive charges than that deposited in O2 because of smaller PRS spectral intensity of the former. It is confirmed by ArF laser irradiation that this positive charge is caused by oxygen defects in HfO2. Moreover, the effects of rapid thermal annealing (RTA) on HfO2/Si have been evaluated by PRS. The PRS spectral intensity becomes maximum by RTA at 600°C in N2 or O2. It is suggested that the suitable temperature for the RTA of the HfO2/Si structure prepared by PLD is 600°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Ikeda Kouji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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SOHGAWA Masayuki
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Sohgawa Masayuki
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Naoyama Takuji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Fujimoto Akira
Department of Electrical Engineering, Wakayama National College of Technology, 77 Noshima, Nadacho, Gobo, Wakayama 644-0023, Japan
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Tada Taizou
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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