Contactless Characterization of Fixed Charges in HfO2 Thin Film from Photoreflectance

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概要

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• Fixed oxide charges in HfO2 thin films have been characterized by photoreflectance spectroscopy (PRS). HfO2 films were deposited on Si by pulsed laser deposition (PLD) in N2, O2 and a mixture of these gases. PRS spectral intensity decreases with increasing positive charge in a film. HfO2 deposited in N2 has larger positive charges than that deposited in O2 because of smaller PRS spectral intensity of the former. It is confirmed by ArF laser irradiation that this positive charge is caused by oxygen defects in HfO2. Moreover, the effects of rapid thermal annealing (RTA) on HfO2/Si have been evaluated by PRS. The PRS spectral intensity becomes maximum by RTA at 600°C in N2 or O2. It is suggested that the suitable temperature for the RTA of the HfO2/Si structure prepared by PLD is 600°C.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Fujimoto Akira

  Department Of Electrical Engineering Wakayama National College Of Technology

• Ikeda Kouji

  Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of

• Kanashima Takeshi

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Yoshida Masato

  Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of

• SOHGAWA Masayuki

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School

• Tada Taizou

  Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of

• Naoyama Takuji

  Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of

• Okuyama Masanori

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Sohgawa Masayuki

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Kanashima Takeshi

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Naoyama Takuji

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Fujimoto Akira

  Department of Electrical Engineering, Wakayama National College of Technology, 77 Noshima, Nadacho, Gobo, Wakayama 644-0023, Japan

• Tada Taizou

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

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