Preparation of $m=1--2$ Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films

概要

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$C$-axis-oriented epitaxial natural-superlattice-structured Bi2MoO6–Bi3TiNbO9 (BM–BTN) ($m=1--2$) and Bi2WO6–Bi3TiNbO9 (BW–BTN) ($m=1--2$) films are grown by pulsed-laser deposition (PLD) on SrTiO3 (001) substrates. The $c$-lattice constant (6.738 nm) of the BM–BTN film is very close to that (6.54 nm) of the superlattice structure of one BM unit cell and two BTN unit cells. The $c$-lattice constant (2.089 nm) of the BW–BTN film is very close to that (2.07 nm) of the superlattice structure of one BW unit cell and one BTN unit cell. The long-range natural-superlattice-structure of BM and BTN films have been prepared on Pt(111)/TiO2/SiO2/Si substrates by PLD and oxygen postannealing at 650°C. X-ray diffractions clearly show the formation of the long-range superlattice of the 15.5 nm iterative layer, which corresponds to 50 unit cells consisting of (113)-oriented BM and (115)-oriented BTN. These BM BTN thin films exhibit good ferroelectricity with a $2P_{r}$ of 40 μC/cm2.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-09-15