A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Noda Minoru

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Takahashi Mitsue

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• OKUYAMA Masanori

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Okuyama Masanori

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• KODAMA Kazushi

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• IKEUCHI Itaru

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Ikeuchi Itaru

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

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• A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
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