Takahashi Mitsue | Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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概要
- 同名の論文著者
- Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering Sの論文著者
関連著者
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Noda Minoru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Takahashi Mitsue
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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野田 三喜男
愛知教大
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Narita Masanao
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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KODAMA Kazushi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Kodama Kazushi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Takahashi M
Institute Of Industrial Science The University Of Tokyo
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Noda M
Department Of Electronics Fukuoka Institute Of Technology
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Okuyama M
Graduate School Of Engineering Science Osaka University
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SUGIYAMA Hideki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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Ikeuchi Itaru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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NAKAISO Toshiyuki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Nakaiso Toshiyuki
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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IKEUCHI Itaru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Grishin Alex
Condensed Matter Physics Royal Institute Of Technology
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Lerescu Alexandru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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RICINSCHI Dan
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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HEDBLOM Patrik
Condensed Matter Physics, Royal Institute of Technology
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Ricinschi D
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Hedblom Patrik
Condensed Matter Physics Royal Institute Of Technology
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Okuyama Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka City, Osaka 560-8531, Japan
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Nakaiso Toshiyuki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka City, Osaka 560-8531, Japan
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Noda Minoru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Sugiyama Hideki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka City, Osaka 560-8531, Japan
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Takahashi Mitsue
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Takahashi Mitsue
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka City, Osaka 560-8531, Japan
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Ikeuchi Itaru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Noda Minoru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka City, Osaka 560-8531, Japan
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Kodama Kazushi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Kodama Kazushi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka City, Osaka 560-8531, Japan
著作論文
- Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
- A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
- Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
- A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory