OKUYAMA Masanori | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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概要
- 同名の論文著者
- Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineeringの論文著者
関連著者
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Noda Minoru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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野田 三喜男
愛知教大
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Okuyama M
Graduate School Of Engineering Science Osaka University
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Narita Masanao
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Noda M
Department Of Electronics Fukuoka Institute Of Technology
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KANASHIMA Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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SUGIYAMA Hideki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Takahashi Mitsue
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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NAKAISO Toshiyuki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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KODAMA Kazushi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Takahashi M
Institute Of Industrial Science The University Of Tokyo
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
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Nakaiso Toshiyuki
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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MAIDA Osamu
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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AGATA Masashi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kodama Kazushi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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SOHGAWA Masayuki
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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野田 実
京都工芸繊維大学大学院工芸科学研究科
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Eriguchi K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Eriguchi Koji
Ulsi Process Technology Development Center Matsushita Electronics
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SHIBUYA Akira
Area of Solid State Electronics, Department of Systems Innovation, Graduate School of Engineering Sc
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Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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KITAI Satoshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Maida Osamu
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Adachi Yuji
Matusita Electric Industrial Co.ltd.
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Kitai Satoshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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NAOYAMA Takuji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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TADA Taizou
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
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ADACHI Yuji
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Adachi Yuji
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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SOHGAWA Masayuki
Graduate School of Engineering Science, Osaka University
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Ueno Masato
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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OHASHI Haruhiko
Japan Synchrotron Radiation Research Institute
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Ohashi Haruhiko
Japan Synchrotron Radiation Research Institute Experimental Facilities Division
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SAITO Keisuke
BRUKER AXS K.K.
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Wada Hideo
Japan Defense Agency
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Wada Hideo
Technical Research And Development Institute Japan Defense Agency
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KOHMA Norinao
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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YUDATE Shinji
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Ikeda Kouji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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IKEUCHI Itaru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Maida Osamu
The Institute Of Scientific And Industrial Research Osaka University
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Ikeuchi Itaru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Grishin Alex
Condensed Matter Physics Royal Institute Of Technology
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Wada H
Japan Defense Agency
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Kohma Norinao
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Agata Masashi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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IKEDA Koji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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YAMASHITA Kaoru
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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FUJIMOTO Akira
Dept. Electrical Engineering, Wakayama National College of Technology
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WADA Hideo
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Lerescu Alexandru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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RICINSCHI Dan
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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HEDBLOM Patrik
Condensed Matter Physics, Royal Institute of Technology
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MATSUMURO Yoshinori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Ricinschi D
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Hedblom Patrik
Condensed Matter Physics Royal Institute Of Technology
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Matsumuro Yoshinori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Sougawa Masayuki
Graduate School Of Engineering Science Osaka University
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Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Kitai Satoshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Ikeda Koji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Matsumuro Yoshinori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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MATSUMURO Yoshinori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Eriguchi Koji
ULSI Process Tech. Dev. Ctr., Matsushita Electronics
著作論文
- Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
- Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
- Preparation of m=1-2 Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
- Natural-Superlattice-Structured Ferroelectric Bi_4Ti_3O_ SrBi_4Ti_4O_ Thin Films Prepared by Pulsed Laser Deposition
- A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
- Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
- Analyses of High Frequency Capacitance-Voltage Characteristics of Metal-Ferroelectrics-Insulator-Silicon Structure
- Contactless Characterization of Fixed Charges in HfO_2 Thin Film from Photoreflectance
- Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
- Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
- Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
- Low-Temperature Preparation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric-Insulator-Semiconductor-FET
- Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
- An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
- An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition