Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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野田 三喜男
愛知教大
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Noda Minoru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Takahashi Mitsue
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Noda M
Department Of Electronics Fukuoka Institute Of Technology
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Narita Masanao
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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Takahashi M
Institute Of Industrial Science The University Of Tokyo
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SUGIYAMA Hideki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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NAKAISO Toshiyuki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama M
Graduate School Of Engineering Science Osaka University
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Nakaiso Toshiyuki
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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