A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_<0.7>Bi_<2+y>Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-04-30

著者

• 野田 三喜男

  愛知教大

• Noda Minoru

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• OKUYAMA Masanori

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Okuyama Masanori

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Noda M

  Department Of Electronics Fukuoka Institute Of Technology

• Sugiyama H

  Data Storage Amp Retrieval Systems Division Hitachi Ltd.

• SUGIYAMA Hideki

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• MATSUMURO Yoshinori

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Matsumuro Yoshinori

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Matsumuro Yoshinori

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Okuyama Masanori

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• MATSUMURO Yoshinori

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University

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