Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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KANASHIMA Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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KITAI Satoshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Maida Osamu
The Institute Of Scientific And Industrial Research Osaka University
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Kitai Satoshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama M
Graduate School Of Engineering Science Osaka University
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Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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