Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
スポンサーリンク
概要
- 論文の詳細を見る
The effects of soft X-ray irradiation of poly-tetra-fluoro-ethylene (PTFE) have been investigated using a figure-8 undulator. In the case of high-intensity irradiation, the surface temperature of the irradiated region increased and PTFE near the surface was evaporated effectively. In contrast, the PTFE surface swelled by the under low-intensity irradiation with the insertion of Al filters more than 9 $\mu$m thick. This reaction was found to be strongly dependent on the flux. The surface profile is largely determined by the relationship between fragment desorption and porous structure generation, and an increase in the surface temperature enhances the fragment desorption and has considerable influence on the surface profile. Al filter insertion decreases the flux and suppresses low-energy photons which are absorbed near the surface. Hence irradiated photons are composed of high-energy photons which penetrate deeply, and the surface temperature is difficult to increase by Al-filter-inserted irradiation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
-
Ueno Masato
Department Of Neurosurgery Osaka Neurological Institute
-
KOHMA Norinao
Department of Physical Science, Graduate School of Engineering Science, Osaka University
-
OHASHI Haruhiko
Experimental Facilities Division, Japan Synchrotron Radiation Research Institute
-
Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
-
Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Shibuya Akira
Department Of Immunology Institute Of Basic Medical Sciences And Center For Tara Graduate School Of
-
Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
-
Shibuya Akira
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
-
Maida Osamu
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
-
Ohashi Haruhiko
Experimental Facilities Division, Japan Synchrotron Radiation Research Institute, Mikazuki, Sayo-gun, Hyogo 679-5198, Japan
-
Kanashima Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
-
Kohma Norinao
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
関連論文
- Peritoneal Shunt Migration into the Pulmonary Artery
- Stability Improvement of Tactile Sensor of Normal and Shear Stresses Using Ni-Cr Thin Film Gauge
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Strained SrTiO_3/ BaTiO_3 Superlattices Formed by Laser Ablation Technique and Their High Dielectric Properties
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Requirement of the tyrosines at residues 258 and 270 of MAIR-I in inhibitory effect on degranulation from basophilic leukemia RBL-2H3
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Requirement of the serine at residue 329 for lipid raft recruitment of DNAM-1 (CD226)
- LFA-1 decreases the antigen dose for T cell activation in vivo
- LFA-1-dependent lipid raft recruitment of DNAM-1 (CD226) in CD4^+ T cell
- Electric and Pyroelectric Behaviors of PbTiO_3 Thin Films Formed by an Excimer Laser Ablation Technique
- Functional characterization of DNAM-1 (CD226) interaction with its ligands PVR (CD155) and nectin-2 (PRR-2/CD112)
- Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO_3 Ceramics by Means of AC Calorimetry
- Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
- Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Contactless Characterization of Fixed Charges in HfO_2 Thin Film from Photoreflectance
- Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
- Giant Ferroelectric Polarization Beyond 150μC/cm^2 in BiFeO_3 Thin Film
- Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Molecular Orbital Analysis of Response of SnO2 Gas Sensor for Aminic Gases (Proceedings of The 5Th East Asian Conference on Chemical Sensors: The 33RD Chemical Sensor Symposium)
- Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- 速報 Highly Oriented Pb(Zr,Ti)O3 Films Prepared by Multi-step Process
- A method for gene transfer, single isolation and in vitro assay for neural stem cells
- Preparation and Basic Properties of SrBi_2Ta_2O_9 Films
- Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Ferroelectric Properties of Bi1.1Fe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N2 and O2
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Analysis of Switching in Perovskite Ferroelectrics on the Tetragonal Side of the Morphotropic Phase Boundary Using a Landau-Theory-Based : Electrical Properties of Condensed Matter
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- Preparation of BiFeO3 Thin Films on SrRuO3/SrTiO3(001) Substrate by Dual Ion Beam Sputtering
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- An Analysis of Nonvolatile Polarized Memory of Semiconductor-Ferroelectric Heterostructure Junction
- Electrooptical Signal at the Anisotropic Saddle Point
- Some Relationships between Modulated Energy Parameter Spectra in One-, Two- and Three-Dimensional Crystals
- Growth of SiO_2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Growth of Oriented Si Film on Quartz from Si_3H_8 by thermal and Photo-CVD Using a D_2 Lamp : Surfaces, Interfaces and Films
- SiO_2 Thin Film Prepared from Si_3H_8 and O_2 by Photo-CVD Using Double Excitation
- Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
- Low Temperature Growth of SiO_2 Thin Film by Double-Excitation Photo-CVD
- Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp
- Development and Functions of Natural Killer Cells
- Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements
- Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride--tetrafluoroethylene) and Pentacene Thin Films
- Micromachined Arrayed Capacitive Ultrasonic Sensor/Transmitter with Parylene Diaphragms
- (111) Preferred Oriented Pb(Zr,Ti)O3 Thick Films Prepared by Multilayer Process and Its Application to Ultrasonic Sensors
- Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride–tetrafluoroethylene) Gate Field-Effect Transistor Memories
- Infrared Characterization of Interface State Reduction by F_2 Treatment in SiO_2/Si Structure using Photo-CVD SiO_2 Film
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Development of Capacitive Ultrasonic Sensor with Parylene Diaphragm Using Micromachining Technique
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Improvement of Field-Induced Electron Emission Using Ir or IrO2 Electrode and Ferroelectric Film Coating
- Sensitivity of Ultrasonic Sensor Structures Having Multilayer Diaphragm Structure
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Analysis of Si–H, Si–O–H and Si–O–O–H Defects in SiO 2 Thin Film by Molecular Orbital Method
- Characterization of Charged Traps near Si–SiO2 Interface in Photo-Induced Chemical Vapor Deposited SiO2 Film
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO3 Ceramics by Means of AC Calorimetry
- Highly Oriented Polycrystalline Si Film on Quartz Grown from Si3H8 by Thermal and Photo-CVD