Development of Capacitive Ultrasonic Sensor with Parylene Diaphragm Using Micromachining Technique
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we reports the development of a miniaturized capacitive ultrasonic sensor with a Parylene diaphragm using a micromachining technique. Since the polymer diaphragm is flexible and nonbrittle, good sensitivity and durability are expected. Moreover, Parylene has good complementary metal oxide semiconductor (CMOS) compatibility, since it can be deposited at room temperature. Practical sensor devices were fabricated, and their performance was characterized. They can receive an impulsive ultrasonic pulse transmitted by a spark discharge with an open-circuit sensitivity of 0.3 mV/Pa. A well-damped waveform was obtained by setting appropriate acoustic holes. The ranging system using this sensor can detect distances up to 1 m with an error of less than 1 mm. The developed sensor can receive ultrasound from a wide area. The wide directivity could be effective for realizing the omni-directional characteristics of the future arrayed sensor, which contains many of the developed sensors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-07-30
著者
-
Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
-
Yamashita Kaoru
Department Of Biology School Of Eduction Waseda University
-
Aoyagi Seiji
Department Of Industrial Engineering Kansai University
-
TANAKA Tsunehisa
Technology Research Institute of Osaka Prefecture
-
INOUE Koji
Technology Research Institute of Osaka Prefecture
-
Aoyagi Seiji
Department of Mechanical Engineering, Faculty of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan
-
Furukawa Katsuhide
Department of Mechanical Engineering, Faculty of Engineering Science, Kansai University, Suita, Osaka 564-8680, Japan
-
Yamashita Kaoru
Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
-
Tanaka Tsunehisa
Technology Research Institute of Osaka Prefecture, Izumi, Osaka 594-1157, Japan
関連論文
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Strained SrTiO_3/ BaTiO_3 Superlattices Formed by Laser Ablation Technique and Their High Dielectric Properties
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Electric and Pyroelectric Behaviors of PbTiO_3 Thin Films Formed by an Excimer Laser Ablation Technique
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO_3 Ceramics by Means of AC Calorimetry
- Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
- Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Development of Powerful Airborne Ultrasonic Transmitter for Robot Metrology : Ultrasonic Motor, Actuator and Transducer
- Development of Fast and Fine Position Control System of an Ultrasonic Motor : Ultrasonic Motor, Actuator and Transducer
- RECOGNITION OF CONTACT STATE BY USING NEURAL NETWORK FOR MICROMACHINED ARRAY TYPE TACTILE SENSOR
- (111) Preferred Oriented Pb(Zr, Ti)O_3 Thick Films Prepared by Multilayer Process and Its Application to Ultrasonic Sensors
- 速報 Highly Oriented Pb(Zr,Ti)O3 Films Prepared by Multi-step Process
- Highly Oriented PZT Films Prepared by Multi-step Process and Its Applications to Ultrasonic Sensors
- Seeding Effect of Ti-layer on Lead Zirconate Titanate(PZT) Thin Films Deposited by Facing Target Sputtering
- Lead Zirconate Titanate (PZT) Thin Film Deposition in Facing Target Sputtering
- Preparation and Basic Properties of SrBi_2Ta_2O_9 Films
- Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Resonance Characteristics of Micro Cantilever in Liquid
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Ferroelectric Properties of Bi1.1Fe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N2 and O2
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Analysis of Switching in Perovskite Ferroelectrics on the Tetragonal Side of the Morphotropic Phase Boundary Using a Landau-Theory-Based : Electrical Properties of Condensed Matter
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- Effect of Dispersing Ag Micro Particles on Enhancing Surface Potential of CYTOP Electret Film
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- Immunohistochemical Study of Ontogeny of Pituitary Prolactin and Growth Hormone Cells in Xenopus laevis
- An Analysis of Nonvolatile Polarized Memory of Semiconductor-Ferroelectric Heterostructure Junction
- Electrooptical Signal at the Anisotropic Saddle Point
- Some Relationships between Modulated Energy Parameter Spectra in One-, Two- and Three-Dimensional Crystals
- Growth of SiO_2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Growth of Oriented Si Film on Quartz from Si_3H_8 by thermal and Photo-CVD Using a D_2 Lamp : Surfaces, Interfaces and Films
- SiO_2 Thin Film Prepared from Si_3H_8 and O_2 by Photo-CVD Using Double Excitation
- Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
- Low Temperature Growth of SiO_2 Thin Film by Double-Excitation Photo-CVD
- Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp
- Micromachined Arrayed Capacitive Ultrasonic Sensor/Transmitter with Parylene Diaphragms
- (111) Preferred Oriented Pb(Zr,Ti)O3 Thick Films Prepared by Multilayer Process and Its Application to Ultrasonic Sensors
- Infrared Characterization of Interface State Reduction by F_2 Treatment in SiO_2/Si Structure using Photo-CVD SiO_2 Film
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Development of Capacitive Ultrasonic Sensor with Parylene Diaphragm Using Micromachining Technique
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Improvement of Field-Induced Electron Emission Using Ir or IrO2 Electrode and Ferroelectric Film Coating
- Sensitivity of Ultrasonic Sensor Structures Having Multilayer Diaphragm Structure
- Prevalence of drug-resistant opportunistic microorganisms in oral cavity after treatment for oral cancer
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Analysis of Si–H, Si–O–H and Si–O–O–H Defects in SiO 2 Thin Film by Molecular Orbital Method
- Characterization of Charged Traps near Si–SiO2 Interface in Photo-Induced Chemical Vapor Deposited SiO2 Film
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO3 Ceramics by Means of AC Calorimetry
- Highly Oriented Polycrystalline Si Film on Quartz Grown from Si3H8 by Thermal and Photo-CVD